1 CG2H80030D 30 w, 8.0 ghz, gan hemt die crees CG2H80030D is a gallium nitride (gan) high electron mobility transistor (hemt), based on crees 28v, 0.25um gan-on-sic process technology. gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. gan hemts offer greater power density and wider bandwidths compared to si and gaas transistors. features ? 17 db typical small signal gain at 4 ghz ? 12 db typical small signal gain at 8 ghz ? 30 w typical p sat ? 28 v operation ? high breakdown voltage ? high temperature operation ? up to 8 ghz operation ? high effciency applications ? 2-way private radio ? broadband amplifers ? cellular infrastructure ? test instrumentation ? class a, ab, linear amplifers suitable for ofdm, w-cdma, edge, cdma waveforms packaging information ? bare die are shipped in gel-pak? containers. ? non-adhesive tacky membrane immobilizes die during shipment. r e v 1 . 0 C a u g u s t 2 0 1 7 pn: CG2H80030D subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c parameter symbol rating units conditions drain-source voltage v dss 84 vdc gate-source voltage v gs -10, +2 vdc storage temperature t stg -65, +150 operating junction temperature t j 225 maximum forward gate current i gmax 7.0 ma maximum drain current 1 i dmax 3.0 a thermal resistance, junction to case (packaged) 2 r . 4.9 85c, 28.8w dissipation thermal resistance, junction to case (die only) r . 2.74 85c, 28.8w dissipation mounting temperature (30 seconds) t s 320 30 seconds note 1 current limit for long term, reliable operation note 2 )yxigxmghmiexxegywmr%y7rqsyrxihxseqmpxmgoy1sgevvmiv electrical characteristics (frequency = 4 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics gate threshold voltage v gs(th) -3.6 -3.0 C2.4 v v ds = 10 v, i d = 7.2 ma gate quiescent voltage v gs(q) C -2.7 C v dc v dd = 28 v, i dq = 200 ma drain-source breakdown voltage v bd 120 C C v v gs = -8 v, i d = 7.2 ma on resistance r on 0.26 0.33 0.41 v ds = 0.1 v rf characteristics small signal gain g ss C 17 C db v dd = 28 v, i dq = 200 ma saturated power output 1 p sat C 30 C w v dd = 28 v, i dq = 200 ma (vemr)jgmirg 2 C 65 C % v dd = 28 v, i dq = 200 ma, p sat = 30 w output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 200 ma, p out = 30 w cw dynamic characteristics input capacitance c gs C 7.3 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 2.2 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 0.37 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 p sat mwhirihew- g = 0.7 ma. 2 (vemr)jgmirg4 out 4 dc . CG2H80030D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 die dimensions (units in microns) overall die size 1660 x 920 (+0/-50) microns, die thickness 100 (+/- 10) microns. all gate and drain pads must be wire bonded for electrical connection. assembly notes: ? recommended solder is ausn (80/20) solder. refer to crees website for the eutectic die bond procedure application note at www.cree.com/rf/document-library ? vacuum collet is the preferred method of pick-up. ? the backside of the die is the source (ground) contact. ? die back side gold plating is 5 microns thick minimum. ? thermosonic ball or wedge bonding are the preferred connection methods. ? gold wire must be used for connections. ? use the die label (xx-yy) for correct orientation. CG2H80030D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance simulated maximum available gain and k factor of the CG2H80030D v dd = 28 v, i dq = 200 ma intrinsic die parameters - reference planes at centers of gate and drain bonding pads. no wire bonds assumed. typical noise performance simulated minimum noise figure and noise resistance vs frequency of the CG2H80030D v dd = 28 v, i dq = 200 ma CG2H80030D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker marketing & sales director cree, rf components 1.919.407.5639 CG2H80030D rev 1.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2017 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
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